Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus

ABSTRACT

A fiber-containing resin substrate for collectively sealing a semiconductor devices mounting surface of a substrate having the semiconductor devices mounted thereon or a semiconductor devices forming surface of a wafer having semiconductor devices formed thereon, includes: a resin-impregnated fiber base material obtained by impregnating a fiber base material with a thermosetting resin and semi-curing or curing the thermosetting resin; and an uncured resin layer containing an uncured thermosetting resin and formed on one side of the resin-impregnated fiber base material. There can be a fiber-containing resin substrate that enables suppressing warp of a wafer and delamination of semiconductor devices even though a large-diameter wafer or a large-diameter substrate made of a metal and the like is sealed, enables collectively sealing a semiconductor devices mounting surface of the substrate or a semiconductor devices forming surface of the wafer, and has excellent heat resistance or moisture resistance after sealing.

This application is a divisional application of U.S. patent Ser. No.13/301,035, filed on Nov. 21, 2011, which claims priority to JP2010-289900, filed Dec. 27, 2010. The disclosures of each of theseapplications are hereby incorporated by reference in their entireties.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a sealing material that enablescollective sealing on a wafer level, and more particularly to a sealingmaterial having a substrate-like shape, and also relates to a substratehaving the semiconductor devices mounted thereon and a wafer havingsemiconductor devices formed thereon which are sealed with thesubstrate-like sealing material, a semiconductor apparatus obtained byforming the substrate having the semiconductor devices mounted thereonand the wafer having the semiconductor devices formed thereon intopieces, and a method for manufacturing a semiconductor apparatus usingthe substrate-like sealing material.

2. Description of the Related Art

In regard to wafer-level sealing for a semiconductor devices mountingsurface of a substrate having the semiconductor devices mounted thereonor a semiconductor devices forming surface of a wafer havingsemiconductor devices formed thereon, various kinds of methods have beenconventionally suggested and examined, and there are sealing based onspin coating, sealing based on screen printing (Japanese UnexaminedPatent Application Publication No. 2002-179885), and a method using acomposite sheet obtained by coating a film support with a hot-melt epoxyresin (Japanese Unexamined Patent Application Publication No. 2009-60146and Japanese Unexamined Patent Application Publication No. 2007-001266)as examples of such methods.

Among others, as a wafer-level sealing method for a semiconductordevices mounting surface of a substrate having semiconductor devicesmounted thereon, a method that has been recently put into commercialproduction comprises attaching a film having a double-side adhesivelayer to an upper portion of a metal, a silicon wafer, or a glasssubstrate and the like, or applying an adhesive to an upper portion ofthe substrate by spin coating and the like, then arranging, bonding, andmounting semiconductor devices on the substrate to provide thesemiconductor devices mounting surface, and thereafter performingpressure forming and sealing while heating using, e.g., a liquid epoxyresin or an epoxy molding compound, thereby sealing the semiconductordevices mounting surface (Japanese Unexamined Patent ApplicationPublication (Translation of PCT Application) No. 2004-504723). Further,likewise, as a wafer-level sealing method for a semiconductor devicesforming surface of a wafer having semiconductor devices formed thereon,a method that has been recently put into commercial production comprisesperforming pressure forming and sealing while heating using, e.g., theliquid epoxy resin or the epoxy molding compound, thereby sealing thesemiconductor devices mounting surface.

However, according to the above-described methods, the sealing can beperformed without serious problems when a small-diameter wafer or asmall-diameter substrate made of, e.g., a metal of approximately 200 mm(8 inches) is used, but a serious problem is that the substrate or thewafer warps due to contraction stress of an epoxy resin and the like atthe time of the sealing and curing when a large-diameter substratehaving semiconductor devices mounted thereon or a large-diameter waferhaving semiconductor devices formed thereon of 300 mm (12 inches) orabove is sealed. Furthermore, when sealing a semiconductor devicesmounting surface of the large-diameter substrate having thesemiconductor devices mounted thereon on the wafer level, there arises aproblem that the semiconductor devices is delaminated from the substrateof a metal and the like due to the contraction stress of, e.g., theepoxy resin at the time of the sealing and curing, and hence a seriousproblem is that mass production is impossible.

A method for solving the problems involved by an increase in diameter ofthe substrate having the semiconductor devices mounted thereon or thewafer having the semiconductor devices formed thereon as described aboveis to fill a sealing resin composition with nearly 90 wt % of a filleror reduce the contraction stress at the time of curing based onrealization of low elasticity of the sealing resin composition (JapaneseUnexamined Patent Application Publication No. 2002-179885, JapaneseUnexamined Patent Application Publication No. 2009-60146, and JapaneseUnexamined Patent Application Publication No. 2007-001266).

However, there newly arises a problem that, when filling with nearly 90wt % of the filler, viscosity of the sealing resin compositionincreases, and force is applied the semiconductor devices mounted on thesubstrate at the time of casting, molding and sealing of the sealingresin composition, whereby the semiconductor devices is delaminated fromthe substrate. Moreover, when the elasticity of the sealing resin islowered, the warp of the sealed substrate having the semiconductordevices mounted thereon or the sealed wafer having the semiconductordevices formed thereon can be improved, but a reduction in sealingperformance, e.g., heat resistance or moisture resistance newly occurs.Therefore, these solving methods cannot obtain fundamental solutions.Therefore, there has been demanded a sealing material which cancollectively seal a semiconductor devices mounting surface of asubstrate having the semiconductor devices mounted thereon or asemiconductor devices forming surface of a wafer having semiconductordevices formed thereon on a wafer level without occurrence of warp ofthe substrate or the wafer or delamination of the semiconductor devicesfrom the substrate made of, e.g., a metal even though the large-diameterwafer or large-diameter substrate made of a metal and the like is sealedand which has excellent sealing performance, e.g., heat resistance ormoisture resistance after the sealing.

SUMMARY OF THE INVENTION

In view of the above-described problems, it is an object of the presentinvention to provide a fiber-containing resin substrate that enablessuppressing warp of a substrate or a wafer and delamination ofsemiconductor devices from the substrate even though the large-diameterwafer or the large-diameter substrate made of a metal and the like issealed, enables collectively sealing a semiconductor devices mountingsurface of the substrate having the semiconductor devices mountedthereon or a semiconductor devices forming surface of the wafer havingthe semiconductor devices formed thereon on the wafer level, and hasexcellent sealing performance such as heat resistance or moistureresistance after sealing and very high general versatility.Additionally, it is another object of the present invention to provide asealed substrate having the semiconductor devices mounted thereon and asealed wafer having the semiconductor devices formed thereon which aresealed with the fiber-containing resin substrate, a semiconductorapparatus obtained by dividing the sealed substrate having thesemiconductor devices mounted thereon and the sealed wafer having thesemiconductor devices formed thereon into pieces, and a method formanufacturing a semiconductor apparatus using the fiber-containing resinsubstrate.

To solve the problems, according to the present invention, there isprovided a fiber-containing resin substrate for collectively sealing atleast a semiconductor devices mounting surface of a substrate having thesemiconductor devices mounted thereon or a semiconductor devices formingsurface of a wafer having semiconductor devices formed thereon,comprising:

a resin-impregnated fiber base material obtained by impregnating a fiberbase material with a thermosetting resin and semi-curing or curing thethermosetting resin; and an uncured resin layer containing an uncuredthermosetting resin and formed on one side of the resin-impregnatedfiber base material.

As described above, in the fiber-containing resin substrate having theresin-impregnated fiber base material obtained by impregnating the fiberbase material with the thermosetting resin and semi-curing or curing thethermosetting resin and the uncured resin layer containing the uncuredthermosetting resin and formed on one side of the resin-impregnatedfiber base material, since the resin-impregnated fiber base materialhaving a very small expansion coefficient can suppress contractionstress of the uncured resin layer at the time of sealing and curing,warp of the substrate or the wafer and delamination of the semiconductordevices from the substrate can be suppressed even though thelarge-diameter wafer or the large-diameter substrate made of a metal andthe like is sealed, the semiconductor devices mounting surface of thesubstrate having the semiconductor devices mounted thereon or thesemiconductor devices forming surface of the wafer having thesemiconductor devices formed thereon can be collectively sealed on awafer level, and the fiber-containing resin substrate having excellentsealing performance such as heat resistance or moisture resistance afterthe sealing and having very high general versatility can be provided.

Further, it is preferable for an expansion coefficient of theresin-impregnated fiber base material in an X-Y direction to be notlower than 3 ppm and not greater than 15 ppm.

As described above, when the expansion coefficient of theresin-impregnated fiber base material in the X-Y direction is not lowerthan 3 ppm and not greater than 15 ppm, a difference from the expansioncoefficient of the substrate having the semiconductor devices mountedthereon or the wafer having the semiconductor devices formed thereonbecome small, and warp of the substrate or the wafer to be sealed anddelamination of the semiconductor devices from the substrate can bethereby more assuredly suppressed, which is preferable.

Furthermore, it is preferable for a thickness of the uncured resin layerto be not smaller than 20 microns (μm) and not greater than 200 microns(μm).

As described above, the thickness of the uncured resin layer that is notsmaller than 20 microns is sufficient to seal the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon and the semiconductor devices forming surface of thewafer having the semiconductor devices formed thereon, occurrence of afailure of filling properties caused due to a too small thickness can bepreferably suppressed, and the thickness of 200 microns or below enablessuppressing an excessively large thickness of the sealed substratehaving the semiconductor devices mounted thereon and the sealed waferhaving the semiconductor devices formed thereon that have been subjectedto the sealing, which is preferable.

Moreover, it is preferable for the uncured resin layer to contain anyone of an epoxy resin, a silicone resin, and a mixed resin of epoxy andsilicone that are solidified at a temperature less than 50° C. andmolten at 50° C. or above and 150° C. or below.

As described above, when the uncured resin layer contains any one of theepoxy resin, the silicone resin, and the mixed resin of epoxy andsilicone that are solidified at a temperature that is less than 50° C.and molten at a temperature that is not lower than 50° C. and the nothigher than 150° C., since the resin-impregnated fiber base materialhaving a very small expansion coefficient can suppress the contractionstress of the uncured resin layer including such a resin at the time ofcuring, warp of the substrate or the wafer and delamination of thesemiconductor devices from the substrate can be more assuredlysuppressed even though the large-diameter wafer or the large-diametersubstrate made of a metal and the like is sealed, the fiber-containingresin substrate that can collectively seal the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon or the semiconductor devices forming surface of thewafer having the semiconductor devices formed thereon on the wafer levelcan be provided, and the fiber-containing resin substrate having theuncured resin layer containing such a resin can be a fiber-containingresin substrate having excellent sealing performance, e.g., heatresistance or moisture resistance after sealing in particular.

Additionally, according to the present invention, there is provided asealed substrate having semiconductor devices mounted thereon, whereinthe sealed substrate having the semiconductor devices mounted thereon iscollectively sealed with the fiber-containing resin substrate bycovering a semiconductor devices mounting surface of the substratehaving the semiconductor devices mounted thereon with the uncured resinlayer of the fiber-containing resin substrate and heating and curing theuncured resin layer.

As described above, when the semiconductor devices mounting surface ofthe substrate having the semiconductor devices mounted thereon iscovered with the uncured resin layer of the fiber-containing resinsubstrate and the uncured resin layer is heated and cured, the sealedsubstrate having the semiconductor devices mounted thereon, which iscollectively sealed with the fiber-containing resin substrate, can be asealed substrate having semiconductor devices mounted thereon in whichoccurrence of, warp of the substrate or the wafer and delamination ofthe semiconductor devices from the substrate is suppressed.

Further, according to the present invention, there is provided a sealedwafer having semiconductor devices formed thereon, wherein the sealedwafer having semiconductor devices formed thereon is collectively sealedwith the fiber-containing resin substrate by covering a semiconductordevices forming surface of the wafer having the semiconductor devicesformed thereon with the uncured resin layer of the fiber-containingresin substrate and heating and curing the uncured resin layer.

As described above, when the semiconductor devices forming surface ofthe wafer having the semiconductor devices formed thereon is coveredwith the uncured resin layer of the fiber-containing resin substrate andthe uncured resin layer is heated and cured, the sealed wafer having thesemiconductor devices formed thereon, which is collectively sealed withthe fiber-containing resin substrate, can be a sealed wafer havingsemiconductor devices formed thereon in which occurrence of warp of thesubstrate or the wafer and delamination of the semiconductor devicesfrom the substrate is suppressed.

Furthermore, according to the present invention, there is provided asemiconductor apparatus obtained by dicing the sealed substrate havingthe semiconductor devices mounted thereon or the sealed wafer havingsemiconductor devices formed thereon into each piece.

As described above, according to the semiconductor apparatus obtained bydicing the sealed substrate having the semiconductor devices mountedthereon or the sealed wafer having the semiconductor devices formedthereon, which is sealed with the fiber-containing resin substrate, intorespective pieces, the semiconductor apparatus can be manufactured fromthe substrate or the wafer that is sealed with the fiber-containingresin substrate having excellent sealing performance such as heatresistance or moisture resistance and suppressed from warping, therebyobtaining the high-quality semiconductor apparatus.

Moreover, according to the present invention, there is provided a methodfor manufacturing a semiconductor apparatus, comprising:

a covering step of covering a semiconductor devices mounting surface ofa substrate having the semiconductor devices mounted thereon or asemiconductor devices forming surface of a wafer having semiconductordevices formed thereon with an uncured resin layer of thefiber-containing resin substrate;

a sealing step of collectively sealing the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon or the semiconductor devices forming surface of thewafer having semiconductor devices formed thereon by heating and curingthe uncured resin layer to provide a sealed substrate having thesemiconductor devices mounted thereon or a sealed wafer havingsemiconductor devices formed thereon; and

a piece forming step of dicing the sealed substrate having thesemiconductor devices mounted thereon or the sealed wafer havingsemiconductor devices formed thereon into each piece to manufacture thesemiconductor apparatus.

According to such a method for manufacturing a semiconductor apparatus,at the covering step, the semiconductor devices mounting surface or thesemiconductor devices forming surface can be easily coated with theuncured resin layer of the fiber-containing resins substrate without afilling failure. Additionally, since the fiber-containing resinsubstrate is used, the resin-impregnated fiber base material cansuppress the contraction stress of the uncured resin layer at the timeof curing, the semiconductor devices mounting surface or thesemiconductor devices forming surface can be thereby collectively sealedat the sealing step, and the sealed substrate having the semiconductordevices mounted thereon or the sealed wafer having semiconductor devicesformed thereon in which warp of the substrate or the wafer anddelamination of the semiconductor devices from the substrate aresuppressed can be obtained even though the thin large-diameter wafer orthe thin large-diameter substrate made of a metal and the like issealed. Further, the semiconductor apparatus can be diced as each piecefrom the sealed substrate having a semiconductor mounted thereon or thesealed wafer having a semiconductor formed thereon, which is sealed withthe fiber-containing resin substrate having excellent sealingperformance such as heat resistance or moisture resistance andsuppressed from warping at the piece forming step, whereby the methodfor manufacturing a semiconductor apparatus that enables manufacturing ahigh-quality semiconductor apparatus can be obtained.

As described above, according to the fiber-containing resin substrateaccording to the present invention, since the resin-impregnated fiberbase material can suppress the contraction stress of the uncured resinlayer at the time of curing and sealing, occurrence of warp of thesubstrate or the wafer or delamination of the semiconductor devices fromthe substrate made of a metal and the like can be suppressed even thoughthe large-diameter wafer or the large-diameter substrate made of a metaland the like is sealed, the semiconductor devices mounting surface ofthe substrate having the semiconductor devices mounted thereon or thesemiconductor devices forming surface of the wafer having thesemiconductor devices formed thereon can be collectively sealed on thewafer level, and the fiber-containing resin substrate having excellentsealing performance, e.g., heat resistance or moisture resistance afterthe sealing and has very high general versatility can be obtained.Furthermore, the sealed substrate having the semiconductor devicesmounted thereon and the sealed wafer having semiconductor devices formedthereon, which is sealed with the fiber-containing resin substrate, hasa configuration that occurrence of warp of the substrate or the wafer ordelamination of the semiconductor devices from the substrate made of ametal and the like is suppressed. Moreover, there can be provided thehigh-quality semiconductor apparatus obtained by dividing into eachpiece the sealed substrate having the semiconductor devices mountedthereon and the sealed wafer having semiconductor devices formed thereonwhich are sealed with the fiber-containing resin substrate having theexcellent sealing performance, e.g., heat resistance or moistureresistance and suppressed from warping. Additionally, the method formanufacturing a semiconductor apparatus using the fiber-containing resinsubstrate enables manufacturing the high-quality semiconductorapparatus.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows an example of a cross-sectional view of a fiber-containingresin substrate according to the present invention;

FIG. 2( a) shows an example of a cross-sectional view of a sealedsubstrate having the semiconductor devices mounted thereon which issealed with the fiber-containing resin substrate according to thepresent invention, and FIG. 2( b) shows an example of a cross-sectionalview of a sealed wafer having semiconductor devices formed thereon whichis sealed with the same;

FIG. 3( a) shows an example of a cross-sectional view of a semiconductorapparatus according to the present invention fabricated from the sealedsubstrate having semiconductor devices mounted thereon, and FIG. 3( b)shows an example of a cross-sectional view of a semiconductor apparatusaccording to the present invention fabricated from the sealed waferhaving semiconductor devices formed thereon; and

FIG. 4 shows an example of a flowchart of a method for manufacturing asemiconductor apparatus from a substrate having the semiconductordevices mounted thereon using the fiber-containing resin substrateaccording to the present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Detailed description will now be given as to a fiber-containing resinsubstrate, a sealed substrate having the semiconductor devices mountedthereon and a sealed wafer having semiconductor devices formed thereonwhich are sealed with the fiber-containing resin substrate, asemiconductor apparatus obtained by dividing the sealed substrate havingthe semiconductor devices mounted thereon and the sealed wafer havingsemiconductor devices formed thereon into each piece, and a method formanufacturing a semiconductor apparatus using the fiber-containing resinsubstrate according to the present invention, but the present inventionis not restricted thereto.

As described above, there has been demanded a highly versatile sealingmaterial that can suppress occurrence of warp of the substrate or thewafer or delamination of the semiconductor devices from the substrate ofa metal and the like even though a large-diameter substrate of, e.g., ametal having semiconductor devices mounted thereon or a large-diameterwafer having semiconductor devices formed thereon is sealed,collectively seal a semiconductor devices mounting surface of thesubstrate having the semiconductor devices mounted thereon or asemiconductor devices forming surface of the wafer having thesemiconductor devices formed thereon, and has excellent sealingperformance, e.g., heat resistance or moisture resistance after thesealing.

As a result of repeatedly conducting keen examination for achieving theobject, the present inventors have discovered that, when afiber-containing resin substrate having a resin-impregnated fiber basematerial obtained by impregnating a fiber base material with athermosetting resin and semi-curing or curing the thermosetting resinand an uncured resin layer containing an uncured resin and formed on oneside of the resin-impregnated fiber base material is used, theresin-impregnated fiber base material having a very small expansioncoefficient can suppress contraction stress of the uncured resin layerat the time of curing, that warp of the substrate or the wafer ordelamination of the semiconductor devices from the substrate can besuppressed by this contraction stress suppressing function even thoughthe large-diameter wafer or the large-diameter substrate made of, e.g.,a metal is sealed, and that using the fiber-containing resin substrateaccording to the present invention enables collectively sealing asemiconductor devices mounting surface of the substrate having thesemiconductor devices mounted thereon or a semiconductor devices formingsurface of the wafer having the semiconductor devices formed thereon ona wafer level and providing a sealing material having excellent sealingperformance, e.g., heat resistance or moisture resistance after sealingand very high general versatility, thereby bringing the fiber-containingresin substrate according to the present invention to completion.

Furthermore, the present inventors has discovered that a sealedsubstrate having the semiconductor devices mounted thereon and a sealedwafer having semiconductor devices formed thereon, which arecollectively sealed with the fiber-containing resin substrate, can be asealed substrate having the semiconductor devices mounted thereon and asealed wafer having semiconductor devices formed thereon each having aconfiguration that occurrence of warp of the substrate or the wafer anddelamination of the semiconductor devices from the substrate issuppressed, and that a high-quality semiconductor apparatus can beobtained by dividing the sealed substrate having the semiconductordevices mounted thereon and the sealed wafer having the semiconductordevices formed thereon, in which the warp or the delamination of thesemiconductor devices is suppressed as described above, into each piece,thereby bringing the sealed substrate having semiconductor devicesmounted thereon, the sealed wafer having semiconductor devices formedthereon, and the semiconductor apparatus to completion.

Moreover, the present inventors have discovered that using thefiber-containing resin substrate enables easily covering thesemiconductor devices mounting surface or the semiconductor devicesforming surface, that the semiconductor devices mounting surface or thesemiconductor devices forming surface can be collectively sealed byheating and curing an uncured resin layer in the fiber-containing resinsubstrate, and that the high-quality semiconductor apparatus can bemanufactured by the dicing into each piece the sealed substrate havingthe semiconductor devices mounted thereon or the sealed wafer havingsemiconductor devices formed thereon which is sealed with thefiber-containing resin substrate having excellent sealing performanceand configured to suppress warp and delamination of the semiconductordevices, thereby bringing the method for manufacturing a semiconductorapparatus according to the present invention to completion.

According to the present invention, there is provided a fiber-containingresin substrate for collectively sealing at least a semiconductordevices mounting surface of a substrate having the semiconductor devicesmounted thereon or a semiconductor devices forming surface of a waferhaving the semiconductor devices formed thereon,

the fiber-containing resin substrate comprising: a resin-impregnatedfiber base material obtained by impregnating a fiber base material witha thermosetting resin and semi-curing or curing the thermosetting resin;and an uncured resin layer containing an uncured thermosetting resin andformed on one side of the resin-impregnated fiber base material.

<Resin-Impregnated Fiber Base Material>

The fiber-containing resin substrate according to the present inventionhas a resin-impregnated fiber base material. The resin-impregnated fiberbase material is obtained by impregnating a fiber base material with athermosetting resin and semi-curing or curing the thermosetting resin.Since the resin-impregnated fiber base material has a very smallexpansion coefficient and can suppress contraction stress when curingthe later-described uncured resin layer, warp of the substrate or thewafer and delamination of the semiconductor devices from the substratecan be suppressed even though the large-diameter wafer or thelarge-diameter substrate made of a metal and the like is sealed with thefiber-containing resin substrate according to the present invention.

[Fiber Base Material]

Materials that can be used as the fiber base material are exemplified bycarbon fiber, inorganic fiber such as glass fiber, quartz glass fiber,or a metal fiber, organic fiber such as aromatic polyamide fiber,polyimide fiber, or polyamide-imide fiber, silicon carbide fiber,titanium carbide fiber, boron fiber, alumina fiber, and others, and anybase material can be used in accordance with product characteristics.Further, the most preferred fiber base materials are exemplified byglass fiber, quartz fiber, carbon fiber, and others. Among others, theglass fiber or the quartz glass fiber having high insulation propertiesis preferable as the fiber base material.

Conformations of the fiber base material are exemplified by a sheet typesuch as roving obtained by pulling and aligning long fiber filaments ina fixed direction, fiber cloth, nonwoven cloth, a chop strand mat, andothers, but they are not restricted in particular as long as a laminatedbody can be formed.

[Thermosetting Resin]

Although the thermosetting resin is exemplified by an epoxy resin, asilicone resin, a mixed resin made of the epoxy resin and the siliconresin that are explained below with examples, it is not restricted inparticular as long as it is a resin with thermosetting properties thatis generally used for sealing semiconductor devices.

[Method for Fabricating Resin-Impregnated Fiber Base Material]

As a method for impregnating the fiber base material with thethermosetting resin, either a solvent method or a hot melt method can beused. The solvent method is a method for adjusting resin varnishobtained by dissolving the thermosetting resin in an organic solvent,impregnating the fiber base material with the resin varnish and thenremoving the organic solvent by stripping, and the hot melt method is amethod for heating and melting the solid thermosetting resin andimpregnating the fiber base material with this thermosetting resin.

A method for semi-curing the thermosetting resin with which the fiberbase material is impregnated is not restricted in particular, but thereis a method for, e.g., performing heating to effect deliquoring of thethermosetting resin with which the fiber base material is impregnatedand thereby semi-curing the thermosetting resin, for example. Although amethod for curing the thermosetting resin with which the fiber basematerial is impregnated is not restricted in particular, there is amethod for performing heating to cure the thermosetting resin with whichthe fiber base material is impregnated, for example.

A thickness of the resin-impregnated fiber base material obtained byimpregnating the fiber base material with the thermosetting resin andsemi-curing or curing the thermosetting resin is determined by athickness of the fiber base material such as fiber cloth, and a thickresin-impregnated fiber base material is fabricated by increasing thenumber of sheets of the fiber base material, e.g., the fiber cloth to beused and laminating these sheets.

In the present invention, semi-curing means a B-stage (a curingintermediary body of the thermosetting resin; the resin in this state issoftened when heated, and it swells when brought into contact with agiven type of solvent, but it is not completely molten or dissolved)state defined in JIS K 6800 “adhesive/adhesion terms”.

As a thickness of the resin-impregnated fiber base material, a thicknessof 50 microns to 1 mm is preferable and a thickness of 50 microns to 500microns is more preferable in both cases where the thermosetting resinwith which the fiber base material is impregnated is semi-cured and thatthe same is cured. A thickness of 50 microns or above is preferablesince it can suppress deformation caused when the thickness is toosmall, and a thickness of 1 mm or below is preferable since it cansuppress the semiconductor apparatus itself from becoming too thick.

Moreover, as an expansion coefficient of the resin-impregnated fiberbase material in an X-Y direction, a value that is not smaller than 3ppm and not greater than 15 ppm is preferable, and a value that is notsmaller than 5 and not greater than 10 ppm is more preferable. When theexpansion coefficient of the resin-impregnated fiber base material inthe X-Y direction is not smaller than 3 ppm and not greater than 15 ppm,a difference from an expansion coefficient of the substrate having thesemiconductor devices mounted thereon or the wafer having semiconductordevices formed thereon can be suppressed from being increased, therebymore assuredly suppressing warp of the substrate or the wafer. It is tobe noted that the X-Y direction means a plane direction of theresin-impregnated fiber base material. Additionally, the expansioncoefficient in the X-Y direction means an expansion coefficient measuredwhile arbitrarily setting an X axis and a Y axis in the plane directionof the resin-impregnated fiber base material.

The resin-impregnated fiber base material is important in order toreduce warp after collectively sealing the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon or the semiconductor devices forming surface of thewafer having the semiconductor devices formed thereon and to reinforcethe substrate having one or more semiconductor devices aligned andbonded thereon. Therefore, the hard and rigid resin-impregnated fiberbase material is desirable.

<Uncured Resin Layer>

The fiber-containing resin substrate according to the present inventionhas an uncured resin layer. The uncured resin layer is made of anuncured thermosetting resin and formed on one side of theresin-impregnated fiber base material. The uncured resin layer serves asa resin layer used for sealing.

It is desirable for the uncured resin layer to have a thickness that isnot smaller than 20 microns and not greater than 200 microns. Thethickness that is not smaller than 20 microns is sufficient to seal thesemiconductor devices mounting surface of the substrate having thesemiconductor devices mounted thereon or the semiconductor devicesforming surface of the wafer having the semiconductor devices formedthereon and preferable since occurrence of a failure of fillingproperties caused due to an extremely small thickness can be suppressed,and the thickness that is not greater than 200 microns is desirablesince it is possible to suppress an extremely large thickness of thesealed substrate having the semiconductor devices mounted thereon andthe sealed wafer having semiconductor devices formed thereon that aresealed.

Although the uncured resin layer is not restricted in particular, anuncured resin layer containing a liquid epoxy resin or a solid epoxyresin, a silicone resin, or a mixed resin made of the epoxy resin andthe silicone resin generally used for sealing of semiconductor devicesis preferable. In particular, it is preferable for the uncured resinlayer to contain any one of the epoxy resin, the silicone resin, and theepoxy-silicone mixed resin that are solidified at a temperature lessthan 50° C. and molten at a temperature that is not lower than 50° C.and not higher than 150° C.

[Epoxy Resin]

Although the epoxy resin is not restricted in particular, it isexemplified by a bisphenol type epoxy resin such as a bisphenol A epoxyresin, a bisphenol F epoxy resin, 3,3′,5,5′-tetramethyl-4,4′-bisphenoltype epoxy resin, or 4,4′-bisphenol type epoxy resin, an epoxy resinobtained by hydrogenating an aromatic ring of a phenol novolac-typeepoxy resin, a cresol novolac-type epoxy resin, a bisphenol Anovolac-type epoxy resin, a naphthalene diol-type epoxy resin, a trisphenylol methane-type epoxy resin, a tetrakis phenylol ethane-type epoxyresin, or a phenol dicyclopentadiene novolac-type epoxy resin, and aknown epoxy resin that is liquefied or solidified at a room temperaturesuch as an alicyclic epoxy resin. Moreover, a fixed amount of any otherepoxy resin than those described above can be also used together so asnot to deteriorate the effect of the present invention.

Since the uncured resin layer containing the epoxy resin serves as theresin layer that seals the semiconductor devices, it is preferable toreduce halogen ions such as chlorine and alkali ions such as sodium asmuch as possible. 10 ppm or below is desirable for any ions extracted byadding 10 g of a sample to 50 ml of ion-exchange water, leaving it in anover at 120° C. for 20 hours after sealing up, and then performingheating and extraction at 120°.

A hardener for epoxy resins can be contained in the uncured resin layercontaining the epoxy resin. As the hardener, it is possible to use,e.g., a phenol novolac resin, various kinds of amine derivatives, anacid anhydride, or an acid anhydride group obtained by partially openinga ring to thereby generate a carboxylic acid. Among others, it isdesirable to use the phonol novolac resin in order to assure reliabilityof the semiconductor apparatus manufactured using the fiber-containingresin substrate according to the present invention. In particular, it ispreferable to mix the epoxy resin and the phenol novolac resin in such amanner that a mixing ratio is determined by a ratio of an epoxy groupand a phenolic hydroxyl group to be 1:0.8 to 1.3.

Additionally, to facilitate a reaction of the epoxy resin and thehardener, an imidazole derivative, a phosphine derivative, an aminederivative, or a metal compound such as an organic aluminum compound maybe used, for example.

Various kinds of additives may be blended in the uncured resin layercontaining the epoxy resin as required. For example, for the purpose ofimproving properties of a resin, it is possible to add and blend variouskinds of additives such as thermoplastic resins, thermoplasticelastomers, organic synthetic rubbers, silicon-based low-stress agents,waxes, and halogen trap agents so as not to deteriorate the effect ofthe present invention.

[Silicone Resin]

As the silicone resin, a thermosetting silicone resin and others can beused. In particular, it is desirable for the uncured resin layercontaining the silicone resin to contain an addition-curable siliconeresin composition. As the addition-curable silicone resin composition, acomposition having (A) an organosilicon compound having a nonconjugateddouble bond, (B) organohydrogenpolysiloxane, and (C) a platinum-basedcatalyst as essential components is particularly preferable. Thecomponents (A) to (C) will now be described hereinafter.

Component (A): Organosilicon Compound Having Nonconjugated Double Bond

The (A) organosilicon compound having a nonconjugated double bond isexemplified by organopolysiloxane represented by a general formula (1):R¹R²R³SiO—(R⁴R⁵SiO)_(a)—(R⁶R⁷SiO)_(b)—SiR¹R²R³ wherein R′ representsunivalent hydrocarbon group having a nonconjugated double bond, R² to R⁷represent the same or different univalent hydrocarbon groups, and a andb represent integers meeting 0≦a≦500, 0≦b≦250, and 0≦a+b≦500.

In the general formula (1), R¹ is the univalent hydrocarbon group havingnonconjugated double bond, which is preferably a univalent hydrocarbongroup having nonconjugated double bond having an aliphatic unsaturatedbond as typified by an alkenyl group having a carbon number 2 to 8 orpreferably a carbon number 2 to 6.

In the general formula (1), R² to R⁷ are the same or different univalenthydrocarbon groups, which are exemplified by an alkyl group, an alkenylgroup, an aryl group, or an aralkyl group each preferably having acarbon number 1 to 20 or more preferably a carbon number 1 to 10.Further, among others, R⁴ to R⁷ are univalent hydrocarbon groupsexcluding the aliphatic unsaturated bond, which are particularlypreferably, e.g., an alkyl group, an aryl group, or an aralkyl grouphaving no aliphatic unsaturated bond such as an alkenyl group.Furthermore, among others, R⁶ and R⁷ are preferably aromatic univalenthydrocarbon groups or more preferably, e.g., an aryl group having acarbon number 6 to 12 such as a phenyl group or a tolyl group.

In the general formula (1), a and b are the integers meeting 0≦a≦500,0≦b≦250, and 0≦a+b≦500, a is preferably 10≦a≦500, b is preferably0≦b≦150, and a+b preferably meets 10≦a+b≦500.

Although organopolysiloxane shown in the general formula (1) can beobtained by an alkali equilibration reaction between cyclicdiorganopolysiloxane such as a cyclic diphenylpolysiloxane or a cyclicmethylphenylpolysiloxane and disiloxane such asdiphenyltetravinyldisiloxane or a divinyltetraphenyldisiloxane to beconstituted a terminal group, since a small amount of a catalystadvances polymerization with an irreversible reaction in theequilibration reaction using an alkali catalyst (particularly strongalkali such as KOH), ring-opening polymerization alone quantitativelyadvances, a terminal blocking ratio is high, and hence a silanol groupand a chloride component are not usually contained.

Organopolysiloxane shown in the general formula (1) is specificallyexemplified by the following expression:

wherein k and m represent integers meeting 0≦k≦500, 0≦m≦250, and0≦k+m≦500, and preferably integers meeting 5≦k+m≦250 and 0≦m/(k+m)≦0.5.

As the component (A), besides organopolysiloxane having a straight-chainstructure represented by the general formula (1), organopolysiloxanehaving a three-dimensional network structure including a trifunctionalsiloxane unit, a tetrafunctional siloxane unit, and the like can be alsoused. One type of (A) the organosilicon compound having a nonconjugateddouble bond alone may be used, or two or more types of the same may bemixed and used.

It is preferable for an amount of a group having a nonconjugated doublebond in (A) the organosilicon compound having a nonconjugated doublebond to be 1 to 50 mol % in all univalent hydrocarbon groups (allunivalent hydrocarbon groups bonding to Si atoms), more preferable forthe same to be 2 to 40 mol %, or particularly preferable for the same tobe 5 to 30 mol %. An excellent cured material can be obtained at thetime of curing when an amount of the group having the nonconjugateddouble bond is not lower than 1 mol %, and mechanical characteristicsare excellent at the time of curing when the same is not greater than 50mol %, which is preferable.

Furthermore, it is preferable for the (A) the organosilicon compoundhaving a nonconjugated double bond to have an aromatic univalenthydrocarbon group (an aromatic univalent hydrocarbon group bonding to anSi atom), and it is preferable for the content of the aromatic univalenthydrocarbon group to be 0 to 95 mol % in all univalent hydrocarbongroups (all univalent hydrocarbon groups bonding to Si atoms), morepreferable for the same to be 10 to 90 mol %, or particularly preferablefor the same to be 20 to 80 mol %. Including an appropriate amount ofthe aromatic univalent hydrocarbon group in the resin provides anadvantage that mechanical characteristics at the time of curing areexcellent and manufacture can be facilitated.

Component (B): Oranohydrogenpolysiloxane

As the component (B), organohydrogenpolysiloxane having two or morehydrogen atoms (SiH groups) bonding to silicon atoms in one molecule ispreferable. Organohydrogenpolysiloxane having two or more hydrogen atoms(SiH groups) bonding to silicon atoms in one molecule can function as across-linker, and a cured material can be formed by an additionalreaction of the SiH group in the component (B) and the group havingnonconjugated double bond such as a vinyl group or an alkenyl group inthe component (A).

Moreover, it is preferable for (B) organohydrogenpolysiloxane to have anaromatic univalent hydrocarbon group. When (B)organohydrogenpolysiloxane has the aromatic univalent hydrocarbon groupin this manner, compatibility with respect to the component (A) can beenhanced. One type of (B) organohydrogenpolysiloxane alone may be used,or two or more types of the same may be mixed and used, and (B)organohydrogenpolysiloxane having the aromatic hydrocarbon group can becontained as a part or all of the component (B).

Although not restricted, (B) organohydrogenpolysiloxane is exemplifiedby 1,1,3,3-tetramethyldisiloxane, 1,3,5,7-tetramethylcyclotetrasiloxane,tris(dimethylhydrogensiloxy)methylsilane,tris(dimethylhydrogensiloxy)phenylsilane,1-glysidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane,1,5-glysidoxypropyl-1,3,5,7-tetramethylcyclotetrasiloxane,1-glysidoxypropyl-5-trimethoxysilylethyl-1,3,5,7-tetramethylcyclotetrasiloxane,double-ended trimethylsiloxy group blocked methylhydrogenpolysiloxane, adouble-ended trimethylsiloxy group blockeddimethylsiloxane/methylhydrogensiloxane copolymer, double-endeddimethylhydrogensiloxy group blocked dimethylpolysiloxane, adouble-ended dimethylhydrogensiloxy group blockeddimethylsiloxane/methylhydorgensiloxane copolymer, a double-endedtrimethylsiloxy group blocked methylhydrogensiloxane/diphenylsiloxanecopolymer, a double-ended trimethylsiloxy group blockedmethylhydrogensiloxane/diphenylsiloxane/dimethylsiloxane copolymer, atrimethoxysilane polymer, a copolymer constituted of (CH₃)₂HSiO_(1/2)units and SiO_(4/2) units, a copolymer constituted of (CH₃)₂HSiO_(1/2)units, SiO_(4/2) units, and (C₆H₅)SiO_(3/2) units, and others.

Additionally, organohydrogenpolysiloxane obtained by using a unitrepresented by the following structure can be also used.

Further, as (B) organohydrogenpolysiloxane, there is one having thefollowing structure.

Although a molecular structure of (B) organohydrogenpolysiloxane may beany one of a straight chain type, a cyclic type, a branched type, and athree-dimensional network type, it is preferable for the number ofsilicon atoms (a polymerization degree in case of a polymer) in onemolecule to be 2 or above, more preferable for the same to be 2 to1,000, and particularly preferable for the same to be approximately 2 to300.

In regard to a blending quantity of (B) organohydrogenpolysiloxane, itis preferable for the number of silicon atom-bonded hydrogen atoms (SiHgroups) in the component (B) to be 0.7 to 3.0 per group having anonconjugated double bond such as an alkenyl group in the component (A).

Component (C): Platinum-Based Catalyst

As the component (C), a platinum-based catalyst is used. As (C) theplatinum-based catalyst, there are, e.g., a chloroplatinic acid, adenaturing alcohol chloroplatinic acid, a platinum complex having achelate structure, and others. One type selected from these catalystsmay be solely used, or two or more types may be combined and used.

A blending quantity of (C) the platinum-based catalyst is a curingeffective quantity, a so-called catalyst quantity can suffice, andusually the range of 0.1 to 500 ppm per 100 parts by mass which is atotal mass of the component (A) and the component (B) is preferable, andthe range of 0.5 to 100 ppm is particularly preferable when convertedinto a mass of a platinum group metal.

Since the uncured resin layer containing the silicon resin serves as aresin layer that seals the semiconductor devices, it is desirable toreduce halogen ions such as chlorine and alkali ions such as sodium asmuch as possible. Usually, it is preferable for each type of ions tohave an amount of 10 ppm or below in extraction at 120° C.

[Mixed Resin Made of Epoxy Resin and Silicone Resin]

As an epoxy resin and a silicone resin contained in the mixed resin,there are the epoxy resins and the silicone resins described above.

Since the uncured resin layer containing the mixed resin serves as aresin layer that seals the semiconductor devices, it is preferable toreduce halogen ions such as chlorine and alkali ions such as sodium asmuch as possible. Usually, it is preferable for each type of ions tohave an amount of 10 ppm or below in extraction at 120° C.

[inorganic Filler]

An inorganic filler can be blended in the uncured resin layer accordingto the present invention. As the inorganic filler to be blended, thereare, e.g., silica such as molten silica or crystalline silica, alumina,silicon nitride, aluminum nitride, alminosilicate, boron nitride, glassfiber, antimonous trioxide, and others. Average particle diameters orshapes of these inorganic fillers are not restricted in particular.

As the inorganic filler added to the uncured resin layer containing theepoxy resin in particular, a filler previously subjected to a surfacetreatment using a coupling agent such as a silane coupling agent or atitanate coupling agent may be blended to increase coupling strength ofthe epoxy resin and the inorganic filler.

As such a coupling agent, it is preferable to use, e.g., epoxyfunctionalized alkoxysilane such as γ-glycidoxypropyltrimethoxysilane,γ-glycidoxypropylmethyldiethoxysilane, orβ-(3,4-epoxycyclohexyl)ethyltrimethoxysilane, amino functionalizedalkoxysilane such as N-β(aminoethyl)-γ-aminopropyltrimethoxysilane,γ-aminopropyltriethoxysilane, or N-phenyl-γ-aminopropyltrimethoxysilane,mercapto functionalized alkoxysilane such asγ-mercaptopropyltrimethoxysilane, and others. It is to be noted that ablending quantity of the coupling agent used for a surface treatment anda surface treatment method are not restricted in particular.

When adding to the uncured resin layer constituted of the silicone resincomposition, a material obtained by treating a surface of the inorganicfiller with the above-described coupling material may be blended.

A preferable blending quantity of the inorganic filler is 100 to 1300parts by mass and a more preferable blending quantity of the same is 200to 1000 parts by mass with respect to 100 parts by mass as a total massof a resin in the epoxy resin composition or the silicone resincomposition. 100 parts by mass or above can obtain sufficient strength,and 1300 parts by mass or below enables suppressing a reduction inflowability due to thickening and also suppressing a failure of fillingproperties due to a reduction in flowability, whereby the semiconductordevices formed on the wafer and the semiconductor devicesarranged/mounted on the substrate can be excellently sealed. It is to benoted that made of this inorganic filler in the range of 50 to 95 mass %or especially 60 to 90 mass % in the entire composition constituting theuncured resin layer is preferable.

<Fiber-Containing Resin Substrate>

FIG. 1 shows an example of a cross-sectional view of a fiber-containingresin substrate according to the present invention. A fiber-containingresin substrate 10 according to the present invention has theresin-impregnated fiber base material 1 obtained by impregnating a fiberbase material with a thermosetting resin and semi-curing or curing thethermosetting resin and the uncured resin layer 2 containing an uncuredthermosetting resin and formed on one side of the resin-impregnatedfiber base material.

[Method for Fabricating Fiber-Containing Resin Substrate]

When fabricating the fiber-containing resin substrate according to thepresent invention using the resin-impregnated fiber base materialobtained by impregnating the fiber base material with the thermosettingresin and semi-curing the thermosetting resin, a thermosetting resinsuch as a thermosetting liquid epoxy resin or silicone resin is furtherapplied to one side of the resin-impregnated fiber base material underreduced pressure or vacuum based on printing or dispensing, and it isheated to form a solid uncured resin layer at 50° C. or below, therebyfabricating the fiber-containing resin substrate.

When using the thermosetting epoxy resin as the thermosetting resin withwhich the fiber base material is impregnated and adopting theresin-impregnated fiber base material obtained by semi-curing thethermosetting resin to fabricate the fiber-containing resin substrateaccording to the present invention, it is preferable that the uncuredthermosetting resin formed on one side of the resin-impregnated fiberbase material is also the epoxy resin. When the thermosetting resin thatimpregnates the resin-impregnated fiber base material to be semi-curedand the thermosetting resin of the uncured resin layer are the same typeof thermosetting resin as described above, the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon or the semiconductor devices forming surface of thewafer having the semiconductor devices formed thereon can becollectively sealed and cured at the same time, and hence a furtherrobust sealing function can be achieved, which is desirable. When thesilicone resin is used as the thermosetting resin that impregnates thefiber base material, likewise, it is preferable to use the siliconeresin as the uncured thermosetting resin.

When fabricating the fiber-containing resin substrate according to thepresent invention using the resin-impregnated fiber base materialobtained by impregnating the fiber base material with the thermosettingresin and curing the thermosetting resin, the uncured resin layer can beformed by various kinds of methods adopted for the epoxy thermosettingresin or the silicone thermosetting resin in the conventional method,e.g., performing press molding or printing with respect to the uncuredthermosetting resin onto one side of the resin-impregnated fiber basematerial. After the formation, usually, it is preferable to carry outpost cure at a temperature of approximately 180° C. for 4 to 8 hours.Besides, as a method for forming the uncured resin layer containing theuncured thermosetting resin on one side of the resin-impregnated basematerial, the epoxy thermosetting resin or the silicone thermosettingresin that is solid at a room temperature is pressurized while beingheated, or an appropriate amount of a polar solvent such as acetone isadded to the epoxy resin composition to effect liquefaction, a thin filmis formed by printing and the like, and the solvent is removed by, e.g.,heating under reduced pressure, thereby uniformly forming the uncuredresin layer on one side of the resin-impregnated fiber base material.

The uncured resin layer containing the uncured thermosetting resinhaving no void or no volatile component and having a thickness ofapproximately 30 to 500 microns can be formed on one side of theresin-impregnated fiber base material by any method.

[Substrate Having Semiconductor Devices Mounted Thereon and Wafer HavingSemiconductor Devices Formed Thereon]

The fiber-containing resin substrate according to the present inventionis a fiber-containing resin substrate for collectively sealing thesemiconductor devices mounting surface of the substrate having thesemiconductor devices mounted thereon and the semiconductor devicesforming surface of the wafer having the semiconductor devices formedthereon. As the substrate having the semiconductor devices mountedthereon, there is, e.g., a substrate having a configuration that one ormore semiconductor devices 3 are mounted on an inorganic, metal, ororganic substrate 5 through an adhesive 4 shown in FIG. 2( a). Further,as the wafer having the semiconductor devices formed thereon, there is,e.g., a wafer having a configuration that semiconductor devices 6 areformed on a wafer 7 shown in FIG. 2( b). It is to be noted that thesubstrate having the semiconductor devices mounted thereon includessemiconductor devices array on which semiconductor devices are mountedand aligned, for example;

<Sealed Substrate Having Semiconductor Devices Mounted Thereon andSealed Wafer Having Semiconductor Devices Formed Thereon>

FIGS. 2( a) and (b) show examples of cross-sectional views the sealedsubstrate having the semiconductor devices mounted thereon and thesealed wafer having semiconductor devices formed thereon, which aresealed with the fiber-containing resin substrate according to thepresent invention. In the sealed substrate 11 having semiconductordevices mounted thereon according to the present invention, asemiconductor devices mounting surface of a substrate 5 havingsemiconductor devices 3 mounted thereon is covered with an uncured resinlayers 2 (see FIG. 1) of the fiber-containing resin substrate 10, theuncured resin layer 2 (see FIG. 1) is heated and cured to provide acured resin layer 2′, and the surface is collectively sealed with thefiber-containing resin substrate 10 (FIG. 2( a)). Furthermore, in thesealed wafer 12 having semiconductor devices formed thereon according tothe present invention, a semiconductor devices forming surface of awafer 7 having semiconductor devices 6 formed thereon is covered withthe uncured resin layer 2 (see FIG. 1) of the fiber-containing resinsubstrate 10, the uncured resin layer 2 (see FIG. 1) is heated and curedto provide the cured resin layer 2′, and the surface is collectivelysealed with the fiber-containing resin substrate 10 (FIG. 2( b)).

As described above, when the semiconductor devices mounting surface ofthe substrate having the semiconductor devices mounted thereon or thesemiconductor devices forming surface of the wafer having thesemiconductor devices formed thereon is covered with the uncured resinlayer of the fiber-containing resin substrate and the uncured resinlayer is heated and cured, the sealed substrate having the semiconductordevices mounted thereon or the sealed wafer having the semiconductordevices formed thereon, which are collectively sealed with thefiber-containing resin substrate, can be a sealed substrate having thesemiconductor devices mounted thereon and a sealed wafer havingsemiconductor devices formed thereon each having a configuration thatwarp of the substrate or the wafer is suppressed from occurring or thesemiconductor devices are suppressed from being delaminated from thesubstrate.

<Semiconductor Apparatus>

FIGS. 3( a) and (b) show examples of a semiconductor apparatus accordingto the present invention. A semiconductor apparatus 13 according to thepresent invention is obtained by dicing the sealed substrate 11 havingthe semiconductor devices mounted thereon (see FIG. 2) or the sealedwafer 12 having semiconductor devices formed thereon (see FIG. 2) intoeach piece. As described above, the semiconductor apparatus 13 or 14that is sealed with the fiber-containing resin substrate havingexcellent sealing performance such as heat resistance or moistureresistance and is fabricated by dicing the sealed substrate 11 havingthe semiconductor devices mounted thereon (see FIG. 2) or the sealedwafer 12 having semiconductor devices formed thereon (see FIG. 2), inwhich warp of the substrate or the wafer and delamination of eachsemiconductor device 3 from the substrate are suppressed, into eachpiece can be a high-quality semiconductor apparatus. When the sealedsubstrate 11 having the semiconductor devices mounted thereon (see FIG.2( a)) is diced into each piece, the semiconductor apparatus 13 can be asemiconductor apparatus that has the semiconductor devices 3 mounted onthe substrate 5 through the adhesive 4 and is sealed with thefiber-containing resin substrate 10 including the cured resin layer 2′and the Resin-impregnated fiber base material 1 from above (FIG. 3( a)).Furthermore, when the sealed wafer 12 having semiconductor devicesformed thereon (see FIG. 2( b)) is diced into each piece, thesemiconductor apparatus 14 can be a semiconductor apparatus that has thesemiconductor devices 6 formed on the wafer 7 and is sealed with thefiber-containing resin substrate 10 including the cured resin layer 2′and the resin-made of fiber base material 1 from above (FIG. 3( b)).

<Method for Manufacturing Semiconductor Apparatus>

The present invention provides a method for manufacturing asemiconductor apparatus, comprising:

a covering step of covering a semiconductor devices mounting surface ofa substrate having the semiconductor devices mounted thereon or asemiconductor devices forming surface of a wafer having semiconductordevices formed thereon with an uncured resin layer of thefiber-containing resin substrate;

a sealing step of collectively sealing the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon or the semiconductor devices forming surface of thewafer having semiconductor devices formed thereon by heating and curingthe uncured resin layer to provide a sealed substrate having thesemiconductor devices mounted thereon or a sealed wafer havingsemiconductor devices formed thereon; and

a piece forming step of dicing the sealed substrate having thesemiconductor devices mounted thereon or the sealed wafer havingsemiconductor devices formed thereon into each piece to manufacture thesemiconductor apparatus. The method for manufacturing a semiconductorapparatus according to the present invention will now be describedhereinafter with reference to FIG. 4.

[Covering Step]

The covering step according to the method for manufacturing asemiconductor apparatus according to the present invention is a step ofcovering the semiconductor devices mounting surface of the substrate 5having the semiconductor devices 3 mounted thereon through the adhesive4 or the semiconductor devices forming surface of the wafer (not shown)having the semiconductor devices (not shown) formed thereon with theuncured resin layer 2 in the fiber-containing resin substrate 10 havingthe resin-impregnated fiber base material 1 and the uncured resin layer2 (FIG. 4(A)).

[Sealing Step]

The sealing step according to the method for manufacturing asemiconductor apparatus of the present invention is a step of heatingand curing the uncured resin layer 2 in the fiber-containing resinsubstrate 10 to provide the cured resin layer 2′ and therebycollectively sealing the semiconductor devices mounting surface of thesubstrate 5 having each semiconductor device 3 mounted thereon or thesemiconductor devices forming surface of the wafer (not shown) havingeach semiconductor device (not shown) formed thereon to provide thesealed substrate 11 having the semiconductor devices mounted thereon orthe sealed wafer (not shown) having semiconductor devices formed thereon(FIG. 4(B)).

[Piece Forming Step]

The piece forming step according to the method for manufacturing asemiconductor apparatus of the present invention is a step of dicing thesealed substrate 11 having the semiconductor devices mounted thereon orthe wafer (not shown) having semiconductor devices formed thereon intoeach piece, thereby manufacturing the semiconductor apparatus 13 or 14(see FIG. 3( b)) (FIGS. 4(C) and (D)).

Specific description will now be given hereinafter. At the covering stepand the sealing step, when, e.g., a vacuum laminator apparatus for usein lamination of a solder resist film, various kinds of insulator films,and others is adopted, covering and sealing without void and warp can becarried out. As a method of lamination, it is possible to adopt anymethod, e.g., roll lamination, diaphragm type vacuum lamination,air-pressure lamination, and others. Among others, using both the vacuumlamination and the air-pressure method is preferable.

Here, description will be given as to an example of using the vacuumlamination apparatus manufactured by Nichigo-Morton Co., Ltd. to seal asilicon wafer having a thickness of 250 microns and a diameter of 300 mm(12 inches) with a fiber-containing resin substrate having a siliconeresin-impregnated fiber base material obtained by impregnating glasscloth (a fiber base material) having a thickness of 50 microns with asilicone resin and an uncured resin layer containing an uncuredthermosetting silicone resin having a thickness of 50 microns on oneside thereof.

In plates that have upper and lower built-in heaters and are set to 150°C., the upper plate has a diaphragm rubber appressed against the heaterunder reduced pressure. A silicon wafer of 300 mm (12 inches) is set onthe lower plate, the fiber-containing resin substrate is set on one sideof this silicon wafer so that the uncured resin layer surface can fit toa semiconductor forming surface of the silicon wafer. Then, the lowerplates is moved up, the upper and lower plates are closely attached toeach other to form a vacuum chamber by an O-ring installed so as tosurround the silicon wafer set on the lower plate, and a pressure in thevacuum chamber is reduced. When the pressure in the vacuum chamber issufficiently reduced, a valve of a pipe communicating with a vacuum pumpfrom a space between the diaphragm of the upper plate and the heater isclosed to send compressed air. As a result, the upper diaphragm rubberinflates to sandwich the silicon wafer and the fiber-containing resinsubstrate between the upper diaphragm rubber and the lower plate, andvacuum lamination and curing of the thermosetting silicone resinsimultaneously advance, and sealing is completed. A curing time ofapproximately 3 to 20 minutes is enough. When the vacuum lamination isterminated, the pressure in the vacuum chamber is restored to a normalpressure, the lower plate is moved down, and the sealed silicon wafer istaken out. The wafer without void or warp can be sealed by theabove-described process. The taken-out silicon wafer is usuallysubjected to post cure at a temperature of 150 to 180° C. for 1 to 4hours, thereby stabilizing electrical characteristics or mechanicalcharacteristics.

The covering and sealing steps using the vacuum lamination apparatus arenot restricted to the illustrated silicone resin, and they can be alsoused for the epoxy resin or a mixed resin of epoxy and silicone.

According to such a method for manufacturing a semiconductor apparatus,the semiconductor devices mounting surface or the semiconductor devicesforming surface can be easily coated with the uncured resin layer of thefiber-containing resin substrate without a filling failure at thecovering step. Further, since the fiber-containing resin substrate isused, the resin-impregnated fiber base material can suppress contractionstress of the uncured resin layer at the timing of curing, thesemiconductor devices mounting surface or the semiconductor devicesforming surface can be thereby collectively sealed at the sealing step,and the sealed substrate having the semiconductor devices mountedthereon or the sealed wafer having semiconductor devices formed thereon,in which warp of the substrate or wafer and delamination of thesemiconductor devices from the substrate are suppressed, can be obtainedeven though the thin large-diameter wafer or the thin large-diametersubstrate made of a metal and the like is collectively sealed.Furthermore, at the piece forming step, the sealed substrate having thesemiconductor devices mounted thereon or the sealed wafer havingsemiconductor devices formed thereon, which is sealed with thefiber-containing resin substrate having excellent sealing performancesuch as heat resistance or moisture resistance and suppressed fromwarping, can be diced into each piece as the semiconductor apparatus,thereby providing the method for manufacturing a semiconductor apparatusthat enables manufacturing the high-quality semiconductor apparatus.

EXAMPLES

The present invention will now be described in more detail hereinafterwith reference to synthesis examples of the silicone resin used as thethermosetting resin of the fiber-containing resin substrate and examplesand comparative examples of the method for manufacturing a semiconductorapparatus using the fiber-containing resin substrate according to thepresent invention, but the present invention is not restricted thereto.

[Synthesis of Organosilicon Compound Having Nonconjugated Double Bond]

Synthesis Example 1 Organosilicon Compound (A1) Having NonconjugatedDouble Bond

27 mol of organosilane represented as PhSiCl₃, 1 mol ofClMe₂SiO(Me₂SiO)₃₃SiMe₂Cl, and 3 mol of MeViSiCl₂ were dissolved in atoluene solvent, dropped into wafer, co-hydrolized, rinsed, neutralizedby alkali cleaning, and dehydrated, and then the solvent was stripped tosynthesize an organosilicon compound (A1) having a nonconjugated doublebond. A composition ratio of a constituent unit of this compound isrepresented by an expression:[PhSiO_(3/2)]_(0.27)[—SiMe₂O—(Me₂SiO)₃₃—SiMe₂O-]_(0.01)[MeViSiO_(2/2)]_(0.03).A weight-average molecular weight of this compound was 62,000, and amelting point of the same was 60° C. It is to be noted that Me in thecomposition formula denote a methyl group, Ph in the composition formuladenote a phenyl group and Vi in the composition formula denotes a vinylgroup represented as (—CH═CH₂).

[Synthesis of Organohydorgenpolysiloxane]

Synthesis Example 2 Organohydorgenpolysiloxane (B1)

27 mol of organosilane represented as PhSiCl₃, 1 mol ofClMe₂SiO(Me₂SiO)₃₃SiMe₂Cl, and 3 mol of MeHSiCl₂ were dissolved in atoluene solvent, dropped into wafer, co-hydrolized, rinsed, neutralizedby alkali cleaning, and dehydrated, and then the solvent was stripped tosynthesize organohydrogenpolysiloxane (B1). A composition ratio of aconstituent unit of this resin is represented by an expression:[PhSiO_(3/2)]_(0.27)[—SiMe₂O—(Me₂SiO)₃₃—SiMe₂O-]_(0.01)[MeHSiO_(2/2)]_(0.03).A weight-average molecular weight of this resin was 58,000, and amelting point of the same was 58° C.

Example 1 Fabrication of Resin-Impregnated Fiber Base Material

189 g of the organosilicon compound (A1) having a nonconjugated doublebond obtained in Synthesis Example 1, 189 g oforganohydrogenpolysiloxane (B1) obtained in Synthesis Example 2, 0.2 gof acetylene alcohol-based ethynylcyclohexanol as a reaction inhibitor,and 0.1 g of an octyl alcohol solution having 1 mass % of achloroplatinic acid were added and well agitated by a planetary mixerheated to 60° C. to obtain a base composition. 400 g of toluene as asolvent was added to this base composition, and 378 g of silica (a tradename: Admafine E5/24C, an average particle diameter: approximately 3manufactured by Admatechs Co., Ltd.) as an inorganic filler was added toprepare a toluene dispersion liquid of the silicone resin composition.

When quartz glass cloth (manufactured by Shin-Etsu Quartz Products Co.,Ltd., a thickness: 50 μm) as a fiber base material was immersed in thetoluene dispersion liquid of the silicone resin composition, the glasscloth was impregnated with the toluene dispersion liquid. The glasscloth was left at 60° C. for 2 hours to volatilize toluene. A film thatis solid at a room temperature (25° C.) was formed on each of bothsurfaces of the quartz glass cloth after volatilizing toluene. The glasscloth was subjected to pressure forming by a hot pressing machine at150° C. for 10 minutes to obtain a molded product, and this product wasfurther subjected to secondary curing at 150° C. for 1 hours, whereby asilicone resin-impregnated fiber base material (I-a) having the curedimpregnating thermosetting resin was obtained.

Further, when quartz glass cloth (manufactured by Shin-Etsu QuartzProducts Co., Ltd., a thickness: 50 μm) as a fiber base material wasimmersed in the toluene dispersion liquid of the silicone resincomposition, the glass cloth was impregnated with the toluene dispersionliquid, and the glass cloth was left at 60° C. for 2 hours to volatilizetoluene, thereby obtaining a silicone resin-impregnated fiber basematerial (II-a) having the semi-cured impregnating thermosetting resin.A film that is solid at a room temperature (25° C.) was formed on eachof both surfaces of the quartz glass cloth after volatilizing toluene.

[Fabrication of Composition for Forming Uncured Resin Layer ContainingUncured Thermosetting Resin]

350 parts by mass of spherical silica having an average particlediameter of 5 μm were added to a composition having 50 parts by mass ofthe organosilicon compound (A1) having a nonconjugated double bond, 50parts by mass of organohydrogenpolysiloxane (B1), 0.2 part by mass ofacetylene alcohol-based ethynylcyclohexanol, and 0.1 part by mass of anoctyl alcohol denatured solution of a chloroplatinic acid added thereto,and this mixture was well agitated by the planetary mixer heated to 60°C. to prepare a silicone resin composition (I-b). This composition issolidified at a room temperature (25° C.)

[Fabrication of Fiber-Containing Resin Substrate]

The silicone resin composition (I-b) was sandwiched between the siliconeresin-impregnated fiber base material (I-a) having the curedimpregnating thermosetting resin (an expansion coefficient: 10 ppm in anx-y axis direction) and a PET film (a release film) coated with afluorine resin, and compression molding was carried out using a hotpress apparatus at 80° C. under a pressure of 5 t for 5 minutes tofabricate a fiber-containing resin substrate (I-c) having an uncuredresin layer containing the uncured thermosetting resin with a thicknessof 50 μm formed on one side of the silicone resin-impregnated fiber basematerial (I-a). Then, this substrate was cut into a circular shapehaving a diameter of 300 mm (12 inches).

[Covering and Sealing of Wafer Having Semiconductor Devices FormedThereon]

Subsequently, the vacuum lamination apparatus manufactured byNichigo-Morton Co., Ltd. set to 130° C. as a plate temperature was usedto perform covering and sealing. First, a silicon wafer having adiameter of 300 mm (12 inches) and a thickness of 125 microns was set onthe lower plate, and this wafer was covered from above while setting thesilicone resin composition (I-b) surface, which is the uncured resinlayer of the fiber-containing resin substrate (I-c) having the releasefilm removed therefrom, with respect to a silicon wafer surface.Thereafter, the plate was closed to effect vacuum compression moldingfor 5 minutes to carry out curing and sealing. After the curing andsealing, the silicon wafer sealed with the fiber-containing resinsubstrate (I-c) was further subjected to post cure at 150° C. for 2hours, thereby obtaining a sealed wafer (I-d) having semiconductordevices formed thereon.

Example 2

[Fabrication of Composition for Forming Uncured Resin Layer ContainingUncured Thermosetting Resin]

350 parts by mass of spherical silica having an average particlediameter of 5 μm were added to a composition having 50 parts by mass ofthe organosilicon compound (A1) having a nonconjugated double bond, 50parts by mass of organohydrogenpolysiloxane (B1), 0.2 part by mass ofacetylene alcohol-based ethynylcyclohexanol, and 0.1 part by mass of anoctyl alcohol denatured solution of a chloroplatinic acid added thereto,and this mixture was well agitated by the planetary mixer heated to 60°C. to prepare a silicone resin composition (II-b). This composition wassolid at a room temperature (25° C.)

[Fabrication of Fiber-Containing Resin Substrate]

The silicone resin composition (II-b) was sandwiched between the siliconresin-impregnated fiber base material (II-a) having the semi-curedimpregnating thermosetting resin (an expansion coefficient: 10 ppm inthe x-y axis direction) and a PET film (a release film) coated with afluorine resin, and compression molding was carried out using a hotpress apparatus at 80° C. under a pressure of 5 t for 5 minutes tofabricate a fiber-containing resin substrate (II-c) having an uncuredresin layer containing the uncured thermosetting resin with a thicknessof 50 μm formed on one side of the silicone resin-impregnated fiber basematerial (II-a). Then, this substrate was cut into a circular shapehaving a diameter of 300 mm (12 inches).

[Covering and Sealing of Wafer Having Semiconductor Devices FormedThereon]

Subsequently, the vacuum lamination apparatus manufactured byNichigo-Morton Co., Ltd. set to 130° C. as a plate temperature was usedto perform covering and sealing. First, a silicon wafer having adiameter of 300 mm (12 inches) and a thickness of 125 microns was set onthe lower plate, and this wafer was covered from above while setting thesilicone resin composition (II-b) surface, which is the uncured resinlayer of the fiber-containing resin substrate (II-c) having the releasefilm removed therefrom, with respect to a silicon wafer surface.Thereafter, the plate was closed to effect vacuum compression moldingfor 5 minutes to carry out curing and sealing. After the curing andsealing, the silicon wafer sealed with the fiber-containing resinsubstrate (II-c) was further subjected to post cure at 150° C. for 2hours, thereby obtaining a sealed wafer (II-d) having semiconductordevices formed thereon.

Example 3 Fabrication of Resin-Impregnated Fiber Base Material

A BT (bismaleimide triazine) resin substrate (a glass transitiontemperature: 185° C.) with a thickness of 70 microns that includes glasscloth as a fiber base material and has spherical silica with a particlediameter of 0.3 micron added thereto to adjust an expansion coefficient(x and y axes) to 7 ppm was prepared as a resin-impregnated fiber basematerial (III-a).

[Fabrication of Composition for Forming Uncured Resin Layer ContainingUncured Thermosetting Resin]

60 parts by mass of a cresol novolac-type epoxy resin (EOCN1020manufactured by Nippon Kayaku Co., Ltd), 30 parts by mass of a phenolnovolac resin (H-4 manufactured by Gun Ei Chemical Industry Co., Ltd.),400 parts by mass of spherical silica (an average particle diameter: 7microns, manufactured by Tatsumori Ltd.), 0.2 part by mass of catalyticTPP (triphenylphosphine, manufactured by Hokko Chemical Industry), and0.5 part by mass of a silane coupling material (KBM403 manufactured byShin-Etsu Chemical Co., Ltd.) were sufficiently mixed using a high-speedmixing apparatus, then heated and kneaded by a continuous kneader to beformed into a sheet, and cooled. The sheet was smashed to obtain anepoxy resin composition (III-b) as granular powder.

[Fabrication of Fiber-Containing Resin Substrate]

The resin-impregnated fiber base material (III-a) was set on a lower dieof a compression molding apparatus that can perform hot compressionunder reduced pressure, and the granular powder of the epoxy resincomposition (III-b) was uniformly dispersed thereon. A temperature ofupper and lower dies were set to 80° C., a PET film (a release film)coated with a fluorine resin was set in the upper die, a pressure in thedies was reduced to a vacuum level, compression molding was carried outfor 3 minutes so as to have a resin thickness of 80 microns, therebyfabricating a fiber-containing resin substrate (IIIc). After themolding, this substrate was cut into a circular shape having a diameterof 300 mm (12 inches).

[Covering and Sealing of Wafer Having Semiconductor Devices FormedThereon]

Subsequently, the vacuum lamination apparatus manufactured byNichigo-Morton Co., Ltd. and set to 170° C. as a plate temperature wasused to perform covering and sealing. First, a silicon wafer having adiameter of 300 mm (12 inches) and a thickness of 125 microns was set onthe lower plate, and this wafer was coated from above while setting theepoxy resin composition (III-b) surface, which is the uncured resinlayer of the fiber-containing resin substrate having the release filmremoved therefrom, with respect to a silicon wafer surface. Thereafter,the plate was closed to effect vacuum compression molding for 5 minutesto carry out curing and sealing. After the curing and sealing, thesilicon wafer was further subjected to post cure at 170° C. for 4 hours,thereby obtaining a sealed wafer (III-d) having semiconductor devicesformed thereon.

Example 4 Substrate Having Semiconductor Devices Mounted Thereon

400 silicon chips (a shape: 5 mm×7 mm, a thickness: 125 microns) assemiconductor devices formed into respective pieces were aligned andmounted on a metal substrate having a diameter of 200 mm (8 inches) anda thickness of 500 microns through an adhesive whose adhesive strengthis lowered at a high temperature.

[Covering and Sealing of Substrate Having Semiconductor Devices MountedThereon]

This metal substrate was coated and sealed using the vacuum laminationapparatus manufactured by Nichigo-Morton Co., Ltd. and set to 170° C. asa plate temperature. First, the metal substrate was set on the lowerplate, and a fiber-containing resin substrate (IV-c) fabricated likeExample 3 was cut into a circular shape having a diameter of 200 mm (8inches). A lamination film was removed, and the covering was performedwhile setting an epoxy resin composition (IV-b) surface, which is theuncured resin layer of the fiber-containing resin substrate (IV-c), withrespect to a semiconductor devices mounting surface on the upper side ofthe metal substrate. Thereafter, the plate was closed to effect vacuumcompression molding for 5 minutes to carry out curing and sealing so asto have a resin thickness of 50 microns on the silicon chips. After thecuring and sealing, the substrate was further subjected to post cure at170° C. for 4 hours, thereby obtaining a sealed substrate (IV-d) havingthe semiconductor devices mounted thereon.

Comparative Example 1

350 parts by mass of spherical silica having an average particlediameter of 5 μm were added to a composition having 50 parts by mass ofthe organosilicon compound (A1) having a nonconjugated double bond, 50parts by mass of organohydrogenpolysiloxane (B1), 0.2 part by mass ofacetylene alcohol-based ethynylcyclohexanol as a reaction inhibitor, and0.1 part by mass of an octyl alcohol denatured solution of achloroplatinic acid added thereto, and this mixture was well agitated bythe planetary mixer heated to 60° C. to prepare a silicone resincomposition (V-a). This composition was solid at 25° C.

[Fabrication of Sealing Sheet]

The silicone resin composition (V-a) was sandwiched between a PET film(a pressurization base film) and a PET film (a release film) coated witha fluorine resin, and compression molding was carried out using a hotpress apparatus at 80° C. under a pressure of 5 t for 5 minutes, and thecomposition was molded into a film-like shape having a thickness of 50μm to fabricate a sealing sheet (V-c) made of the silicone resincomposition (V-a) alone. After the molding, the sheet was cut into acircular shape having a diameter of 300 mm (12 inches).

[Covering and Sealing of Wafer Having Semiconductor Devices FormedThereon]

Subsequently, the vacuum lamination apparatus manufactured byNichigo-Morton Co., Ltd. and set to 130° C. as a plate temperature wasused to perform covering and sealing. First, a silicon wafer having adiameter of 300 mm (12 inches) and a thickness of 125 microns was set onthe lower plate, and the sealing sheet (V-c) made of the silicone resincomposition (V-a) alone having the release film removed therefrom waslaminated thereon. Thereafter, the PET film (the pressurization basefilm) was also delaminated, then the plate was closed, and vacuumcompression molding was effected for 5 minutes to carry out curing andsealing. After the curing and sealing, the wafer was further subjectedto post cure at 150° C. for 2 hours, thereby obtaining a sealed wafer(V-d) having semiconductor devices formed thereon.

Comparative Example 2 Substrate Having Semiconductor Devices MountedThereon

400 silicon chips (a shape: 5 mm×7 mm, a thickness: 125 microns) assemiconductor devices formed into respective pieces were aligned andmounted on a metal substrate having a diameter of 300 mm (8 inches) anda thickness of 500 microns through an adhesive whose adhesive strengthis lowered at a high temperature.

[Covering and Sealing of Substrate Having Semiconductor Devices MountedThereon]

This substrate was set on a lower die of a compression molding apparatusthat can perform hot compression under reduced pressure, and granularpowder of an epoxy resin composition (VI-b) fabricated like Example 3was uniformly dispersed thereon. A temperature of upper and lower dieswere set to 170° C., a PET film (a release film) coated with a fluorineresin was set in the upper die, a pressure in the dies was reduced to avacuum level, and compression molding was carried out for 3 minutes soas to have a resin thickness of 50 microns, thus effecting curing andsealing. After the curing and sealing, posture cure was conducted at170° C. for 4 hours to obtain a sealed substrate (VI-d) having thesemiconductor devices mounted thereon.

Warp, appearances, an adhesion state of the resin and the substrate,whether each semiconductor device has been delaminated from the metalsubstrate were checked with respect to the sealed wafers (I-d) to(III-d), and (V-d) having semiconductor devices formed thereon and thesealed substrates (IV-d) and (VI-d) having semiconductor devices mountedthereon sealed in Examples 1 to 4 and Comparative Examples 1 and 2 asdescribed above. Table 1 shows results. Here, in regard to theappearance, presence/absence of voids and an unfilled state was checked,and the appearance was determined to be excellent when these factorswere not found. Moreover, as to the adhesion state, the adhesion statewas determined to be excellent when delamination did not occur at thetime of molding.

TABLE 1 EXAMPLE EXAMPLE EXAMPLE EXAMPLE COMPARATIVE COMPARATIVE 1 2 3 4EXAMPLE 1 EXAMPLE 2 APPEARANCE EXCELLENT EXCELLENT EXCELLENT EXCELLENTEXCELLENT EXCELLENT WARP OF 0.3 0.4 0.7 0.6 12 8 SUBSTRATE (mm) ADHESIONEXCELLENT EXCELLENT EXCELLENT EXCELLENT EXCELLENT EXCELLENT STATEAPPEARANCE NONE NONE NONE NONE NONE SMALL (VOID) VOID APPEARANCE NONENONE NONE NONE NONE NONE (UNFILLED) SUBSTRATE SILICON SILICON SILICONMETAL SILICON METAL WAFER WAFER WAFER SUBSTRATE WAFER SUBSTRATEDELAMINATION — — — NONE — DELAMINATED OF SEMICONDUCT OR DEVICE FROMSUBSTRATE

Additionally, each of the sealed substrates having semiconductor devicesmounted thereon and the sealed wafers having semiconductor devicesformed thereon in Examples 1 to 4 and Comparative Examples 1 and 2 wasdiced into each piece, and the following heat resistance test andmoisture resistance test were conducted. In the heat resistance state, aheat cycle test was performed with respect to a test piece (the testpiece was maintained at −25° C. for 10 minutes, and it is maintained at125° C. for 10 minutes, and this cycle was repeated for 1000 times) toevaluate whether electrical conduction can be achieved after the test.Further, in the moisture resistance test, a direct-current voltage of 10V was applied to both poles of a circuit of this test piece underconditions of a 85° C. temperature and 85% relative humidity to evaluatewhether a short circuit occurs using a migration tester (manufactured byIMV Corporation, MIG-86). As a result, it was revealed that Examples 1to 4 and Comparative Examples 1 and 2 have no difference and haveexcellent heat resistance and moisture resistance.

Based on the above results, as shown by Comparative Examples 1 and 2using no resin-impregnated fiber base material according to the presentinvention, it was found out that, when the semiconductor devicesmounting surface of the substrate having the semiconductor devicesmounted thereon or the semiconductor devices forming surface of thewafer having semiconductor devices formed thereon are collectivelysealed in these comparative examples, the sealed wafer (V-d) havingsemiconductor devices formed thereon and the sealed substrate (VI-d)having the semiconductor devices mounted thereon to be fabricatedgreatly warp and the semiconductor devices are delaminated from thesubstrate (Table 1). On the other hand, as shown by the examples, in thesealed wafers (I-d) to (III-d) having semiconductor devices formedthereon and the sealed substrate (IV-d) having the semiconductor devicesmounted thereon which are sealed with the fiber-containing resinsubstrate according to the present invention, it was found out that warpof the substrate is greatly suppressed, the appearance and the adhesionstate are excellent, and voids or unfilled states are not producedeither. Therefore, the resin-impregnated fiber base material accordingto the present invention can suppress contraction stress when curing theuncured resin layer, whereby warp of the substrate or the wafer anddelamination of the semiconductor devices from the substrate can besuppressed.

It is to be noted that the present invention is not restricted to theforegoing embodiment. The foregoing embodiment is an example, andexamples that have substantially the same configuration and exercise thesame functions and effects as those in the technical concept describedin claims according to the present invention are included in thetechnical scope of the present invention.

What is claimed is:
 1. A method for manufacturing a semiconductorapparatus, comprising: a covering step of covering, with an uncuredresin layer of a first fiber-containing resin substrate, at least onesemiconductor device mounting surface of a second substrate having theat least one semiconductor device mounted thereon or at least onesemiconductor device forming surface of a wafer having the at least onesemiconductor device formed thereon; a sealing step of collectivelysealing the at least one semiconductor device mounting surface of thesecond substrate having the at least one semiconductor device mountedthereon or the at least one semiconductor device forming surface of thewafer having at least one semiconductor device formed thereon by heatingand curing the uncured resin layer to provide a sealed substrate havingthe at least one semiconductor device mounted thereon or a sealed waferhaving the at least one semiconductor device formed thereon; and a pieceforming step of dicing the sealed substrate having the at least onesemiconductor device mounted thereon or the sealed wafer having the atleast one semiconductor device formed thereon into each piece tomanufacture the semiconductor apparatus, wherein the firstfiber-containing resin substrate comprises a two-layered structureconsisting of a resin-impregnated fiber base material obtained byimpregnating a fiber base material with a thermosetting resin andsemi-curing or curing the thermosetting resin, and the uncured resinlayer containing an uncured thermosetting resin and formed on one sideof the resin-impregnated fiber base material, and wherein a thickness ofthe uncured resin layer is not smaller than 20 microns and not greaterthan 200 microns.
 2. The method for manufacturing the semiconductorapparatus according to claim 1, wherein an expansion coefficient of theresin-impregnated fiber base material in an X-Y direction is not lowerthan 3 ppm and not greater than 15 ppm.
 3. The method for manufacturingthe semiconductor apparatus according to claim 1, wherein the uncuredresin layer contains any one of an epoxy resin, a silicone resin, and amixed resin of epoxy and silicone that are solidified at a temperatureless than 50° C. and molten at 50° C. or above and 150° C. or below. 4.The method for manufacturing the semiconductor apparatus according toclaim 2, wherein the uncured resin layer contains any one of an epoxyresin, a silicone resin, and a mixed resin of epoxy and silicone thatare solidified at a temperature less than 50° C. and molten at 50° C. orabove and 150° C. or below.